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NPT1012B

RF Transistor by MACOM

Note : Your request will be directed to MACOM.

The NPT1012B from MACOM is a RF Transistor with Frequency DC to 4 GHz, Power 43.98 dBm, Power(W) 25 W, P1dB 43 dBm, Gain 13 dB. Tags: Flange. More details for NPT1012B can be seen below.

Product Specifications

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Product Details

  • Part Number
    NPT1012B
  • Manufacturer
    MACOM
  • Description
    DC to 4 GHz, HEMT Transistor

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on Si
  • Application Industry
    ISM
  • Application
    HF/VHF/UHF, L Band, S Band, HF/VHF/UHF, ISM Band, L Band, S Band
  • CW/Pulse
    CW
  • Frequency
    DC to 4 GHz
  • Power
    43.98 dBm
  • Power(W)
    25 W
  • P1dB
    43 dBm
  • Gain
    13 dB
  • Small Signal Gain
    12 to 13 dB
  • Supply Voltage
    28 V
  • Threshold Voltage
    -2.3 to -1.3 V
  • Breakdown Voltage - Drain-Source
    100 V
  • Package Type
    Flange
  • Package
    Flange Ceramic
  • RoHS
    Yes

Technical Documents

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