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NPT2010

RF Transistor by MACOM (189 more products)

Note : Your Quotation Request will be directed to MACOM.

The NPT2010 from MACOM is a RF Transistor with Frequency DC to 2.2 GHz, Power 50 dBm, Power(W) 100 W, Saturated Power 50.5 dBm, Gain 17 dB. More details for NPT2010 can be seen below.

Product Specifications

  • Part Number
    NPT2010
  • Manufacturer
    MACOM
  • Description
    48 V GaN HEMT Transistor that operates from DC to 2.2 GHz with 100 W Saturated Power
  • Transistor Type
    HEMT
  • Technology
    GaN on Si
  • Application Industry
    ISM, Wireless Infrastructure, Aerospace & Defence, Radar
  • Application
    Mobile Radio, Defense, Communication, Avionics, HF/VHF/UHF, ISM Band, L Band, S Band
  • CW/Pulse
    Pulse, CW
  • Frequency
    DC to 2.2 GHz
  • Power
    50 dBm
  • Power(W)
    100 W
  • Saturated Power
    50.5 dBm
  • Gain
    17 dB
  • Small Signal Gain
    17 dB
  • Power Gain (Gp)
    13.5 to 15 dB
  • Supply Voltage
    48 V
  • Threshold Voltage
    -2.5 to -0.5 V
  • Package Type
    Flange
  • Package
    Flange Ceramic
  • RoHS
    Yes
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