NPT2022 Image


RF Transistor by MACOM (187 more products)

Note : Your Quotation Request will be directed to MACOM.

The NPT2022 is a GaN Transistor in a plastic package that operates from DC to 2 GHz. It supports CW, pulsed and linear operation, with output levels up to 100 W (50 dBm). It provides customers 20 dB of gain and 60% drain efficiency at 900 MHz.

Product Specifications

  • Part Number
  • Manufacturer
  • Description
    DC to 2 GHz GaN Transistor in a Plastic Package
  • Transistor Type
  • Application
    Radio, HF/VHF/UHF, VHF, UHF, L Band, S Band
  • Application Type
    Military, Avionics, Cellular
  • Grade
    Space, Military, Commercial
  • Frequency
    DC to 2 GHz
  • Gain
    21 dB
  • Power Gain (Gp)
    19 to 20 dB
  • Power
    100 W
  • Supply Voltage
    48 V
  • Drain Efficiency
    56% to 58%
  • Drain Leakage Current (Id)
    24 mA
  • Gate Leakage Current (Ig)
    12 mA
  • Package Type
  • Package
  • RoHS
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