NPT2022 Image

NPT2022

RF Transistor by MACOM

Note : Your request will be directed to MACOM.

The NPT2022 is a GaN Transistor in a plastic package that operates from DC to 2 GHz. It supports CW, pulsed and linear operation, with output levels up to 100 W (50 dBm). It provides customers 20 dB of gain and 60% drain efficiency at 900 MHz.

Product Specifications

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Product Details

  • Part Number
    NPT2022
  • Manufacturer
    MACOM
  • Description
    DC to 2 GHz GaN Transistor in a Plastic Package

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on Si
  • Application Industry
    ISM, Wireless Infrastructure, Aerospace & Defence, Radar
  • Application
    Mobile Radio, Defense, Communication, Avionics, HF/VHF/UHF, ISM Band, L Band, S Band
  • CW/Pulse
    Pulse, CW
  • Frequency
    DC to 2 GHz
  • Power
    50 dBm
  • Power(W)
    100 W
  • Saturated Power
    50.5 dBm
  • Gain
    19 dB
  • Small Signal Gain
    21 dB
  • Power Gain (Gp)
    19 to 20 dB
  • Supply Voltage
    48 V
  • Threshold Voltage
    -2.5 to -0.5 V
  • Package Type
    Flange
  • Package
    TO272
  • RoHS
    Yes

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