NPT2022 Image

NPT2022

RF Transistor by MACOM (190 more products)

Note : Your Quotation Request will be directed to MACOM.

The NPT2022 is a GaN Transistor in a plastic package that operates from DC to 2 GHz. It supports CW, pulsed and linear operation, with output levels up to 100 W (50 dBm). It provides customers 20 dB of gain and 60% drain efficiency at 900 MHz.

Product Specifications

    Product Details

    • Part Number :
      NPT2022
    • Manufacturer :
      MACOM
    • Description :
      DC to 2 GHz GaN Transistor in a Plastic Package

    General Parameters

    • Transistor Type :
      HEMT
    • Technology :
      GaN on Si
    • Application Industry :
      ISM, Wireless Infrastructure, Aerospace & Defence, Radar
    • Application :
      Mobile Radio, Defense, Communication, Avionics, HF/VHF/UHF, ISM Band, L Band, S Band
    • CW/Pulse :
      Pulse, CW
    • Frequency :
      DC to 2 GHz
    • Power :
      50 dBm
    • Power(W) :
      100 W
    • Saturated Power :
      50.5 dBm
    • Gain :
      19 dB
    • Small Signal Gain :
      21 dB
    • Power Gain (Gp) :
      19 to 20 dB
    • Supply Voltage :
      48 V
    • Threshold Voltage :
      -2.5 to -0.5 V
    • Package Type :
      Flange
    • Package :
      TO272
    • RoHS :
      Yes

    Technical Documents

Click to view more product details on manufacturer's website  »
Need Help?

Need Help?

x
Let us know what you need, we can help find products that meet your requirement.