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NPT35050AB

RF Transistor by MACOM

Note : Your request will be directed to MACOM.

The NPT35050AB from MACOM is a RF Transistor with Frequency 3.3 to 3.8 GHz, Power 48.13 dBm, Power(W) 65.01 W, Gain 13 dB, Small Signal Gain 11 to 13.5 dB. Tags: Flange. More details for NPT35050AB can be seen below.

Product Specifications

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Product Details

  • Part Number
    NPT35050AB
  • Manufacturer
    MACOM
  • Description
    3.3 to 3.8 GHz, HEMT Transistor

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on Si
  • Application Industry
    ISM
  • Application
    HF/VHF/UHF, L Band, S Band
  • CW/Pulse
    Pulse, CW
  • Frequency
    3.3 to 3.8 GHz
  • Power
    48.13 dBm
  • Power(W)
    65.01 W
  • Peak Output Power
    90 W (Peak envelop power P3dB)
  • Gain
    13 dB
  • Small Signal Gain
    11 to 13.5 dB
  • Power Gain (Gp)
    12 dB
  • Supply Voltage
    28 V
  • Threshold Voltage
    -2.3 to -1.3 V
  • Breakdown Voltage - Drain-Source
    100 V
  • Package Type
    Flange
  • Package
    Flange Ceramic
  • RoHS
    Yes

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