NPTB00004B

RF Transistor by MACOM (191 more products)

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The NPTB00004B from MACOM is a GaN Power Transistor that operates from DC to 6 GHz. It delivers a saturated output power of 5 W (~37.1 dBm) with a small signal gain of 16 dB and a drain efficiency of 63.7%. The transistor supports CW, pulsed, and linear operation. It is available in an industry-standard SOIC plastic package that measures 4.9 x 3.9 x 1.47 mm and requires a DC supply of 28 V. This transistor is suitable for use in defence communications, land mobile radio, avionics, wireless infrastructure, ISM and VHF/UHF/L/S-Band radar applications.

Product Specifications

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Product Details

  • Part Number
    NPTB00004B
  • Manufacturer
    MACOM
  • Description
    5 W GaN Power Transistor from DC to 6 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Radar, Military, Wireless Infrastructure
  • Application
    Avionics, Mobile
  • CW/Pulse
    CW, Pulse
  • Frequency
    DC to 6 GHz
  • Power
    37 dBm (Psat)
  • Power(W)
    5 W (Psat)
  • Small Signal Gain
    16 dB
  • Power Gain (Gp)
    12.8 to 14.8 dB
  • Supply Voltage
    28 V
  • Current
    50 mA
  • Drain Efficiency
    45 to 57 %
  • Drain Current
    1.4 A
  • Drain Leakage Current (Id)
    2 mA
  • Gate Leakage Current (Ig)
    1 mA
  • Package Type
    Surface Mount
  • Package
    SOIC Plastic Package
  • RoHS
    Yes
  • Grade
    Commercial, Military

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