UF28150J

RF Transistor by MACOM

Note : Your request will be directed to MACOM.

The UF28150J from MACOM is a RF Transistor with Frequency 100 to 500 MHz, Power 51.76 dBm, Power(W) 149.97 W, Gain 8 dB, Power Gain (Gp) 8 dB. Tags: Flange. More details for UF28150J can be seen below.

Product Specifications

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Product Details

  • Part Number
    UF28150J
  • Manufacturer
    MACOM
  • Description
    Si Based DMOS Transistor

General Parameters

  • Transistor Type
    MOSFET
  • Technology
    Si
  • Application Industry
    Aerospace & Defence, Radar, ISM
  • Application
    Avionics, Communication, Medical
  • CW/Pulse
    CW
  • Frequency
    100 to 500 MHz
  • Power
    51.76 dBm
  • Power(W)
    149.97 W
  • Gain
    8 dB
  • Power Gain (Gp)
    8 dB
  • Supply Voltage
    28 V
  • Threshold Voltage
    2 to 6 V
  • Breakdown Voltage - Drain-Source
    65 V
  • Drain Efficiency
    0.55
  • Package Type
    Flange
  • Package
    Flange Ceramic

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