Note : Your request will be directed to Microchip Technology.
The 1011GN-1000V from Microchip Technology is a RF Transistor with Frequency 1.03 to 1.09 GHz, Power 60 dBm, Power(W) 1000 W, Duty_Cycle 0.02, Power Gain (Gp) 19 to 20.3 dB. Tags: Flange. More details for 1011GN-1000V can be seen below.
200 W GaN Power Transistor from 2.7 to 2.9 GHz
15 W GaN HEMT Transistor Operates up to 10 GHz
1600 W LDMOS Power Transistor from 1 to 450 MHz
400 W Thermally-Enhanced LDMOS Transistor from 859 to 960 MHz
490 W GaN HEMT Transistor from 2.11 to 2.17 GHz
460 W GaN Power Amplifier from 1805 to 1880 MHz
500 W GaN HEMT from 2.9 to 3.5 GHz for S-Band Radar Systems
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