1012GN-1000V

Note : Your request will be directed to Microchip Technology.

1012GN-1000V Image

The 1012GN-1000V from Microchip Technology is a RF Transistor with Frequency 1.025 to 1.15 GHz, Power 60 dBm, Power(W) 1000 W, Duty_Cycle 0.02, Power Gain (Gp) 17.5 to 18.1 dB. Tags: Die. More details for 1012GN-1000V can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    1012GN-1000V
  • Manufacturer
    Microchip Technology
  • Description
    Class-AB GaN-on-SiC HEMT Transistor

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Aerospace & Defence
  • Application
    Avionics
  • CW/Pulse
    Pulse
  • Frequency
    1.025 to 1.15 GHz
  • Power
    60 dBm
  • Power(W)
    1000 W
  • Pulsed Power
    1000 W
  • Pulsed Width
    32 us
  • Duty_Cycle
    0.02
  • Power Gain (Gp)
    17.5 to 18.1 dB
  • VSWR
    3.00:1
  • Class
    AB
  • Supply Voltage
    50 V
  • Drain Bias Current
    64 mA
  • Thermal Resistance
    0.21 C/W
  • Package Type
    Die
  • Package
    55-Q03
  • Operating Temperature
    200 Degree C
  • Storage Temperature
    -55 to 125 Degree C

Technical Documents