1214GN-650V

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1214GN-650V Image

The 1214GN-650V from Microchip Technology is a RF Transistor with Frequency 1.2 to 1.4 GHz, Power 58.13 dBm, Power(W) 650.13 W, Duty_Cycle 0.1, Power Gain (Gp) 17 dB. Tags: Die. More details for 1214GN-650V can be seen below.

Product Specifications

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Product Details

  • Part Number
    1214GN-650V
  • Manufacturer
    Microchip Technology
  • Description
    650 Watts - 50 Volts, 150 us, 10% Broad Band 1200 - 1400 MHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Aerospace & Defence, Wireless Infrastructure
  • Application
    Broadband Amplifier, Data Link, Avionics
  • CW/Pulse
    Pulse
  • Frequency
    1.2 to 1.4 GHz
  • Power
    58.13 dBm
  • Power(W)
    650.13 W
  • Pulsed Power
    650 W
  • Pulsed Width
    150 us
  • Duty_Cycle
    0.1
  • Power Gain (Gp)
    17 dB
  • VSWR
    5.00:1
  • Class
    AB
  • Supply Voltage
    50 V
  • Drain Bias Current
    64 mA
  • Thermal Resistance
    0.21 C/W
  • Package Type
    Die
  • Package
    55-KR
  • Operating Temperature
    250 Degree C
  • Storage Temperature
    -55 to 125 Degree C

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