Note : Your request will be directed to Microchip Technology.
The 1214GN-650V from Microchip Technology is a RF Transistor with Frequency 1.2 to 1.4 GHz, Power 58.13 dBm, Power(W) 650.13 W, Duty_Cycle 0.1, Power Gain (Gp) 17 dB. Tags: Die. More details for 1214GN-650V can be seen below.
15 W GaN HEMT Transistor Operates up to 10 GHz
1600 W LDMOS Power Transistor from 1 to 450 MHz
3600 W GaN on SiC Power Transistor from 1030 to 1090 MHz
490 W GaN HEMT Transistor from 2.11 to 2.17 GHz
800 W RF LDMOS Transistor from 730 to 960 MHz
520 W Thermally-Enhanced LDMOS Transistor from 925 to 960 MHz
400 W CW/Pulsed GaN Amplifier from 2.75 to 3.75 GHz
You can now find similar products from multiple companies on everything RF.
Copyright 2020 © everything RF All Rights Reseverd  |
Let us know what you need, we can help find products that meet your requirement.
Our team will get back to you shortly.
Stay updated with the RF & Microwave Industry.
Content submitted here will be sent to our editorial team who will review and consider it for publication on the website. you will be emailed if this content is published on everything RF.
Please click on the button in the email to get access to this section.