1416GN-120EL

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1416GN-120EL Image

The 1416GN-120EL from Microchip Technology is a RF Transistor with Frequency 1.4 to 1.6 GHz, Power 50.79 to 51.14 dBm, Power(W) 130.02 W, Duty_Cycle 0.1, Power Gain (Gp) 16.8 to 17.2 dB. Tags: Die. More details for 1416GN-120EL can be seen below.

Product Specifications

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Product Details

  • Part Number
    1416GN-120EL
  • Manufacturer
    Microchip Technology
  • Description
    120 W DME/L-Band Radar Driver GaN Power Transistor

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Aerospace & Defence, Radar
  • Application
    Communication, Avionics, L Band
  • CW/Pulse
    Pulse
  • Frequency
    1.4 to 1.6 GHz
  • Power
    50.79 to 51.14 dBm
  • Power(W)
    130.02 W
  • Pulsed Power
    120 to 130 W
  • Pulsed Width
    300 us
  • Duty_Cycle
    0.1
  • Power Gain (Gp)
    16.8 to 17.2 dB
  • VSWR
    5.00:1
  • Class
    AB
  • Supply Voltage
    50 V
  • Drain Bias Current
    12 mA
  • Thermal Resistance
    1.25 C/W
  • Package Type
    Die
  • Package
    55-QQP
  • RoHS
    Yes
  • Operating Temperature
    200 Degree C
  • Storage Temperature
    -55 to 125 Degree C

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