2731GN-220V

Note : Your request will be directed to Microchip Technology.

2731GN-220V Image

The 2731GN-220V from Microchip Technology is a RF Transistor with Frequency 2.7 to 3.1 GHz, Power 53.42 to 53.89 dBm, Power(W) 244.91 W, Duty_Cycle 0.1, Power Gain (Gp) 9.8 to 10.4 dB. Tags: Die. More details for 2731GN-220V can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    2731GN-220V
  • Manufacturer
    Microchip Technology
  • Description
    220 Watts, 50 Volts, 200 us, 10% S-Band Radar 2700 - 3100 MHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Radar
  • Application
    S Band, Pulsed
  • CW/Pulse
    Pulse
  • Frequency
    2.7 to 3.1 GHz
  • Power
    53.42 to 53.89 dBm
  • Power(W)
    244.91 W
  • Pulsed Power
    220 to 245 W
  • Pulsed Width
    200 us
  • Duty_Cycle
    0.1
  • Power Gain (Gp)
    9.8 to 10.4 dB
  • Class
    AB
  • Supply Voltage
    50 V
  • Drain Bias Current
    30 mA
  • Thermal Resistance
    0.33 C/W
  • Package Type
    Die
  • Package
    55-QP
  • Operating Temperature
    250 Degree C
  • Storage Temperature
    -55 to 125 Degree C

Technical Documents