3135GN-200V

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3135GN-200V Image

The 3135GN-200V from Microchip Technology is a RF Transistor with Frequency 3.1 to 3.5 GHz, Power 53.01 to 53.8 dBm, Power(W) 239.88 W, Duty_Cycle 0.1, Power Gain (Gp) 14.5 to 15.3 dB. Tags: Flanged. More details for 3135GN-200V can be seen below.

Product Specifications

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Product Details

  • Part Number
    3135GN-200V
  • Manufacturer
    Microchip Technology
  • Description
    200 Watts, 50 Volts, 200 uS, 10% S-Band Radar 3100 - 3500 MHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Radar
  • Application
    S Band, Pulsed
  • CW/Pulse
    Pulse
  • Frequency
    3.1 to 3.5 GHz
  • Power
    53.01 to 53.8 dBm
  • Power(W)
    239.88 W
  • Pulsed Power
    200 to 240 W
  • Pulsed Width
    200 us
  • Duty_Cycle
    0.1
  • Power Gain (Gp)
    14.5 to 15.3 dB
  • VSWR
    3.00:1
  • Class
    AB
  • Supply Voltage
    50 V
  • Drain Bias Current
    24 mA
  • Thermal Resistance
    0.56 C/W
  • Package Type
    Flanged
  • Package
    55-QP
  • Operating Temperature
    250 Degree C
  • Storage Temperature
    -55 to 125 Degree C

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