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Note : Your request will be directed to Microchip Technology.
The MS1007 from Microchip Technology is a RF Transistor with Frequency DC to 30 MHz, Power 51.76 dBm, Power(W) 149.97 W, Power Gain (Gp) 14 dB, Supply Voltage 50 V. Tags: 2-Hole Flange. More details for MS1007 can be seen below.
GaN on SiC HEMT Doherty Transistor from 3.4 to 3.6 GHz
13.5 W GaN-on-SiC HEMT from 2.5 to 5 GHz
50 W GaN-on-SiC HEMT from 2515 to 2675 MHz
500 W GaN HEMT from 2.7 to 3.1 GHz for S-Band Radar Applications
56 W GaN-on-SiC HEMT from 3700 to 3980 MHz
6 W GaN Transistor Die from 10 MHz to 18 GHz
400 W Thermally-Enhanced LDMOS Transistor from 859 to 960 MHz
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