0912GN-120EP Image

0912GN-120EP

RF Transistor by Microsemi (170 more products)

Note : Your Quotation Request will be directed to Microsemi.

The 0912GN-120EP from Microsemi is a RF Transistor with Frequency 960 MHz to 1.215 GHz, Power 50.79 dBm, Power(W) 119.95 W, Power Gain (Gp) 17.8 to 18.4 dB, VSWR 5.00:1. More details for 0912GN-120EP can be seen below.

Product Specifications

  • Part Number
    0912GN-120EP
  • Manufacturer
    Microsemi
  • Description
    E-Series GaN Transistor
  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Aerospace & Defence
  • Application
    Avionics, L Band
  • CW/Pulse
    Pulse
  • Frequency
    960 MHz to 1.215 GHz
  • Power
    50.79 dBm
  • Power(W)
    119.95 W
  • Pulsed Power
    120 W
  • Pulsed Width
    32 1 us
  • Power Gain (Gp)
    17.8 to 18.4 dB
  • VSWR
    5.00:1
  • Class
    AB
  • Supply Voltage
    50 V
  • Drain Bias Current
    12 mA
  • Package Type
    Die
  • Package
    55-78030
  • Operating Temperature
    200 Degree C
  • Storage Temperature
    -55 to 125 Degree C
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