0912GN-300V Image

0912GN-300V

RF Transistor by Microsemi (263 more products)

Note : Your Quotation Request will be directed to Microsemi.

The 0912GN-300V from Microsemi is a RF Transistor with Frequency 960 MHz to 1.215GHz, Gain 18 dB, Power Gain (Gp) 18 dB, Power 0 to 54.77 dBm, Breakdown Voltage - Drain-Source 150 V. More details for 0912GN-300V can be seen below.

Product Specifications

  • Part Number
    0912GN-300V
  • Manufacturer
    Microsemi
  • Description
    960 MHz to 1.215GHz GaN Transistor
  • Transistor Type
  • Application Type
    Avionics
  • Class
    AB
  • Grade
    Military, Commercial
  • Frequency
    960 MHz to 1.215GHz
  • Gain
    18 dB
  • Power Gain (Gp)
    18 dB
  • Power
    0 to 54.77 dBm
  • Breakdown Voltage - Drain-Source
    150 V
  • Drain Efficiency
    52 to 60 %
  • Drain Leakage Current (Id)
    14 mA
  • Gate Leakage Current (Ig)
    6 mA
  • Duty_Cycle
    0.1
  • Technology
    GaN, HEMT
  • VSWR
    3.00:1
  • Junction Temperature (Tj)
    250 Degree C
  • Power Dissipation (Pdiss)
    650 W
  • Voltage - Drain-Source (Vdss)
    150 V
  • Voltage - Gate-Source (Vgs)
    -8 to 0 V
  • Thermal Resistance
    .28 Degree C/W
  • Package
    Ceramic, Flanged
  • RoHS
    Yes
  • Storage Temperature
    -55 to 125 Degree C
  • Tags
    Microsemi IMS 2015
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