0912GN-300V Image

0912GN-300V

RF Transistor by Microsemi (170 more products)

Note : Your Quotation Request will be directed to Microsemi.

The 0912GN-300V from Microsemi is a RF Transistor with Frequency 960 MHz to 1.215 GHz, Power 54.77 dBm, Power(W) 299.92 W, Duty_Cycle 0.1, Power Gain (Gp) 18 dB. More details for 0912GN-300V can be seen below.

Product Specifications

  • Part Number
    0912GN-300V
  • Manufacturer
    Microsemi
  • Description
    300 Watts - 50 Volts, 128uS, 10% Broad Band 960 - 1215 MHz
  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Aerospace & Defence
  • Application
    Avionics, Broadband Amplifier
  • CW/Pulse
    Pulse
  • Frequency
    960 MHz to 1.215 GHz
  • Power
    54.77 dBm
  • Power(W)
    299.92 W
  • Pulsed Power
    300 W
  • Pulsed Width
    128 us
  • Duty_Cycle
    0.1
  • Power Gain (Gp)
    18 dB
  • VSWR
    3.00:1
  • Class
    AB
  • Supply Voltage
    50 V
  • Drain Bias Current
    14 mA
  • Thermal Resistance
    0.28 C/W
  • Package Type
    Flange
  • Package
    55-KR
  • RoHS
    Yes
  • Operating Temperature
    250 Degree C
  • Storage Temperature
    -55 to 125 Degree C
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