0912GN-50LE Image

0912GN-50LE

RF Transistor by Microsemi

Note : Your request will be directed to Microsemi.

The 0912GN-50LE from Microsemi is a RF Transistor with Frequency 960 MHz to 1.215 GHz, Power 46.99 to 47.63 dBm, Power(W) 57.94 W, Duty_Cycle 0.02, Power Gain (Gp) 15.2 to 15.9 dB. Tags: Die. More details for 0912GN-50LE can be seen below.

Product Specifications

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Product Details

  • Part Number
    0912GN-50LE
  • Manufacturer
    Microsemi
  • Description
    E-Series GaN Transistor Driver

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Aerospace & Defence, Radar
  • Application
    Avionics
  • CW/Pulse
    Pulse
  • Frequency
    960 MHz to 1.215 GHz
  • Power
    46.99 to 47.63 dBm
  • Power(W)
    57.94 W
  • Pulsed Power
    50 to 58 W
  • Pulsed Width
    32 us
  • Duty_Cycle
    0.02
  • Power Gain (Gp)
    15.2 to 15.9 dB
  • VSWR
    5.00:1
  • Class
    AB
  • Supply Voltage
    50 V
  • Drain Bias Current
    4 mA
  • Package Type
    Die
  • Package
    55-QQP
  • Operating Temperature
    200 Degree C
  • Storage Temperature
    -55 to 125 Degree C

Technical Documents

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