1011GN-1000V

RF Transistor by Microsemi (170 more products)

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The 1011GN-1000V from Microsemi is a RF Transistor with Frequency 1.03 to 1.09 GHz, Power 60 dBm, Power(W) 1000 W, Duty_Cycle 0.02, Power Gain (Gp) 19 to 20.3 dB. Tags: Flange. More details for 1011GN-1000V can be seen below.

Product Specifications

    Product Details

    • Part Number :
      1011GN-1000V
    • Manufacturer :
      Microsemi
    • Description :
      1000 Watts, 50 Volts, ELM L-Band Avionics 1030/1090 MHz

    General Parameters

    • Transistor Type :
      HEMT
    • Technology :
      GaN on SiC
    • Application Industry :
      Aerospace & Defence
    • Application :
      Avionics, L Band
    • CW/Pulse :
      Pulse
    • Frequency :
      1.03 to 1.09 GHz
    • Power :
      60 dBm
    • Power(W) :
      1000 W
    • Pulsed Power :
      1000 W
    • Pulsed Width :
      32 us
    • Duty_Cycle :
      0.02
    • Power Gain (Gp) :
      19 to 20.3 dB
    • VSWR :
      3.00:1
    • Class :
      AB
    • Supply Voltage :
      50 V
    • Input Power :
      10 W
    • Drain Bias Current :
      50 mA
    • Package Type :
      Flange
    • Package :
      55-Q03
    • Operating Temperature :
      250 Degree C
    • Storage Temperature :
      -55 to 125 Degree C

    Technical Documents

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