1011GN-1200V Image

1011GN-1200V

RF Transistor by Microsemi (170 more products)

Note : Your Quotation Request will be directed to Microsemi.

The 1011GN-1200V from Microsemi is a RF Transistor with Frequency 1.03 to 1.09 GHz, Power 60.79 dBm, Power(W) 1199.5 W, Duty_Cycle 0.02, Power Gain (Gp) 18.5 to 20 dB. More details for 1011GN-1200V can be seen below.

Product Specifications

  • Part Number
    1011GN-1200V
  • Manufacturer
    Microsemi
  • Description
    1200 Watts, 50 Volts, 32us, 2% L-Band Avionics 1030/1090 MHz
  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Aerospace & Defence
  • Application
    Avionics, L Band
  • CW/Pulse
    Pulse
  • Frequency
    1.03 to 1.09 GHz
  • Power
    60.79 dBm
  • Power(W)
    1199.5 W
  • Pulsed Power
    1200 W
  • Pulsed Width
    32 us
  • Duty_Cycle
    0.02
  • Power Gain (Gp)
    18.5 to 20 dB
  • VSWR
    5.00:1
  • Class
    AB
  • Supply Voltage
    50 V
  • Input Power
    10.5 to 15 W
  • Drain Efficiency
    0.75
  • Drain Bias Current
    64 mA
  • Package Type
    Flange
  • Package
    55-Q03
  • Operating Temperature
    200 Degree C
  • Storage Temperature
    -55 to 125 Degree C
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