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1011GN-30E

RF Transistor by Microsemi (170 more products)

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The 1011GN-30E from Microsemi is a RF Transistor with Frequency 1.03 to 1.09 GHz, Power 44.77 to 45.44 dBm, Power(W) 34.99 W, Duty_Cycle 0.02, Power Gain (Gp) 17 to 18.5 dB. Tags: Die. More details for 1011GN-30E can be seen below.

Product Specifications

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Product Details

  • Part Number
    1011GN-30E
  • Manufacturer
    Microsemi
  • Description
    30 Watts, 50 Volts, 128µs, 10% 1030-1090MHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Aerospace & Defence, Radar
  • Application
    Avionics
  • CW/Pulse
    Pulse
  • Frequency
    1.03 to 1.09 GHz
  • Power
    44.77 to 45.44 dBm
  • Power(W)
    34.99 W
  • Pulsed Power
    125 to 150 W
  • Pulsed Width
    32 us
  • Duty_Cycle
    0.02
  • Power Gain (Gp)
    17 to 18.5 dB
  • VSWR
    5.00:1
  • Class
    AB
  • Supply Voltage
    50 V
  • Drain Bias Current
    12 mA
  • Package Type
    Die
  • Package
    55-QQ
  • Operating Temperature
    200 Degree C
  • Storage Temperature
    -55 to 125 Degree C

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