1011GN-30EL Image

1011GN-30EL

RF Transistor by Microsemi (170 more products)

Note : Your request will be directed to Microsemi.

The 1011GN-30EL from Microsemi is a RF Transistor with Frequency 1.03 to 1.09 GHz, Power 44.77 to 45.44 dBm, Power(W) 34.99 W, Duty_Cycle 0.02, Power Gain (Gp) 17 to 18.5 dB. Tags: Die. More details for 1011GN-30EL can be seen below.

Product Specifications

    Product Details

    • Part Number :
      1011GN-30EL
    • Manufacturer :
      Microsemi
    • Description :
      30 Watts, 50 Volts, 128┬Ás, 10% 1030-1090MHz

    General Parameters

    • Transistor Type :
      HEMT
    • Technology :
      GaN on SiC
    • Application Industry :
      Aerospace & Defence, Radar
    • Application :
      Avionics
    • CW/Pulse :
      Pulse
    • Frequency :
      1.03 to 1.09 GHz
    • Power :
      44.77 to 45.44 dBm
    • Power(W) :
      34.99 W
    • Pulsed Power :
      30 to 35 W
    • Pulsed Width :
      32 us
    • Duty_Cycle :
      0.02
    • Power Gain (Gp) :
      17 to 18.5 dB
    • VSWR :
      5.00:1
    • Class :
      AB
    • Supply Voltage :
      50 V
    • Drain Bias Current :
      4 mA
    • Package Type :
      Die
    • Package :
      55-QQP
    • Operating Temperature :
      200 Degree C
    • Storage Temperature :
      -55 to 125 Degree C

    Technical Documents

Click to view more product details on manufacturer's website  »

Find Transistors

Search from 1896 products from 22 companies

  • To
  • To
  • Search

Need Help?

x
Let us know what you need, we can help find products that meet your requirement.