1011GN-30EP Image

1011GN-30EP

RF Transistor by Microsemi

Note : Your request will be directed to Microsemi.

The 1011GN-30EP from Microsemi is a RF Transistor with Frequency 1.03 to 1.09 GHz, Power 44.77 to 45.44 dBm, Power(W) 34.99 W, Duty_Cycle 0.02, Power Gain (Gp) 17 to 18.5 dB. Tags: Die. More details for 1011GN-30EP can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    1011GN-30EP
  • Manufacturer
    Microsemi
  • Description
    30 Watts, 50 Volts, 128µs, 10% 1030-1090MHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Aerospace & Defence, Radar
  • Application
    Avionics
  • CW/Pulse
    Pulse
  • Frequency
    1.03 to 1.09 GHz
  • Power
    44.77 to 45.44 dBm
  • Power(W)
    34.99 W
  • Pulsed Power
    30 to 35 W
  • Pulsed Width
    32 us
  • Duty_Cycle
    0.02
  • Power Gain (Gp)
    17 to 18.5 dB
  • VSWR
    3.00:1
  • Class
    AB
  • Supply Voltage
    50 V
  • Drain Bias Current
    4 mA
  • Package Type
    Die
  • Package
    55-78030
  • Operating Temperature
    200 Degree C
  • Storage Temperature
    -55 to 125 Degree C

Technical Documents

Need Help Finding a Product?

Need Help?

Let us know what you need, we can help find products that meet your requirement.