1012GN-800V Image

1012GN-800V

RF Transistor by Microsemi (170 more products)

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The 1012GN-800V from Microsemi is a RF Transistor with Frequency 1.025 to 1.15 GHz, Power 59.03 to 59.16 dBm, Power(W) 824.14 W, Duty_Cycle 0.06, Power Gain (Gp) 18.5 to 19.3 dB. More details for 1012GN-800V can be seen below.

Product Specifications

  • Part Number
    1012GN-800V
  • Manufacturer
    Microsemi
  • Description
    800 Watts - 54 Volts, 20us, 6% 1025-1150 MHz
  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Aerospace & Defence
  • Application
    Avionics, L Band
  • CW/Pulse
    Pulse
  • Frequency
    1.025 to 1.15 GHz
  • Power
    59.03 to 59.16 dBm
  • Power(W)
    824.14 W
  • Pulsed Power
    800 to 825 W
  • Pulsed Width
    20 us
  • Duty_Cycle
    0.06
  • Power Gain (Gp)
    18.5 to 19.3 dB
  • Input Return Loss
    -7 to -8 dB
  • VSWR
    5.00:1
  • Class
    AB
  • Supply Voltage
    54 V
  • Drain Bias Current
    64 mA
  • Thermal Resistance
    0.16 C/W
  • Package Type
    Die
  • Package
    55-KR
  • Operating Temperature
    200 Degree C
  • Storage Temperature
    -55 to 125 Degree C
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