1214-300 Image

1214-300

RF Transistor by Microsemi

Note : Your request will be directed to Microsemi.

The 1214-300 from Microsemi is a RF Transistor with Frequency 1.2 to 1.4 GHz, Power 54.31 dBm, Power(W) 269.77 W, Duty_Cycle 0.1, Power Gain (Gp) 8 dB. Tags: Flanged. More details for 1214-300 can be seen below.

Product Specifications

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Product Details

  • Part Number
    1214-300
  • Manufacturer
    Microsemi
  • Description
    220 Watts - 50 Volts, 100ms, 10% Radar 1200 - 1400 MHz

General Parameters

  • Transistor Type
    Bipolar
  • Technology
    Si
  • Application Industry
    Radar
  • Application
    L Band
  • CW/Pulse
    Pulse
  • Frequency
    1.2 to 1.4 GHz
  • Power
    54.31 dBm
  • Power(W)
    269.77 W
  • Pulsed Power
    270 W
  • Pulsed Width
    100 us
  • Duty_Cycle
    0.1
  • Power Gain (Gp)
    8 dB
  • VSWR
    2.00:1, 1.50:1
  • Collector Emmiter Voltage
    50 V
  • Supply Voltage
    50 V
  • Input Power
    42.7 W
  • Thermal Resistance
    0.25 C/W
  • Package Type
    Flanged
  • Package
    55ST-1
  • Storage Temperature
    -65 to 200 Degree C

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