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1214GN-400LV

RF Transistor by Microsemi (170 more products)

Note : Your Quotation Request will be directed to Microsemi.

The 1214GN-400LV from Microsemi is a RF Transistor with Frequency 1.2 to 1.4 GHz, Power 56.02 dBm, Power(W) 399.94 W, Duty_Cycle 0.3, Power Gain (Gp) 16 to 16.8 dB. More details for 1214GN-400LV can be seen below.

Product Specifications

  • Part Number
    1214GN-400LV
  • Manufacturer
    Microsemi
  • Description
    400 Watts - 50 Volts, 4.5ms, 30% Broad Band 1200 - 1400 MHz
  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Radar
  • Application
    Broadband Amplifier, L Band
  • CW/Pulse
    Pulse
  • Frequency
    1.2 to 1.4 GHz
  • Power
    56.02 dBm
  • Power(W)
    399.94 W
  • Pulsed Power
    400 W
  • Pulsed Width
    4.5 mS
  • Duty_Cycle
    0.3
  • Power Gain (Gp)
    16 to 16.8 dB
  • VSWR
    5.00:1
  • Class
    AB
  • Supply Voltage
    50 V
  • Drain Bias Current
    16.8 mA
  • Thermal Resistance
    0.3 C/W
  • Package Type
    Die
  • Package
    55-KR
  • Operating Temperature
    250 Degree C
  • Storage Temperature
    -55 to 125 Degree C
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