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The 1214GN-600VHE from Microsemi is a RF Transistor with Frequency 1.2 to 1.4 GHz, Gain 16.9 to 17.5 dB, Power Gain (Gp) 16.9 to 17.5 dB, Power 0 to 57.78 dBm, Breakdown Voltage - Drain-Source 150 V. More details for 1214GN-600VHE can be seen below.
450 Watt, 50 Volt, 3.1 to 3.5 GHz, GaN RF IMFET
15 Watt, 50 Volt, DC to 4 GHz, GaN RF Transistor
15W, 300 MHz to 1.215 GHz, GaN RF Input-Matched Transistor
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