1214GN-600VHE Image

1214GN-600VHE

RF Transistor by Microsemi (170 more products)

Note : Your Quotation Request will be directed to Microsemi.

The 1214GN-600VHE from Microsemi is a RF Transistor with Frequency 1.2 to 1.4 GHz, Power 57.78 dBm, Power(W) 599.79 W, Duty_Cycle 0.1, Power Gain (Gp) 16.9 to 17.5 dB. Tags: Die. More details for 1214GN-600VHE can be seen below.

Product Specifications

    Product Details

    • Part Number :
      1214GN-600VHE
    • Manufacturer :
      Microsemi
    • Description :
      600 Watts - 50 Volts, 300 us, 10% Broad Band 1200 - 1400 MHz

    General Parameters

    • Transistor Type :
      HEMT
    • Technology :
      GaN on SiC
    • Application Industry :
      Aerospace & Defence, Wireless Infrastructure
    • Application :
      Broadband Amplifier, Data Link, Avionics
    • CW/Pulse :
      Pulse
    • Frequency :
      1.2 to 1.4 GHz
    • Power :
      57.78 dBm
    • Power(W) :
      599.79 W
    • Pulsed Power :
      600 W
    • Pulsed Width :
      300 us
    • Duty_Cycle :
      0.1
    • Power Gain (Gp) :
      16.9 to 17.5 dB
    • VSWR :
      3.00:1
    • Class :
      AB
    • Supply Voltage :
      50 V
    • Drain Bias Current :
      64 mA
    • Thermal Resistance :
      0.23 C/W
    • Package Type :
      Die
    • Package :
      55-KR
    • Operating Temperature :
      200 Degree C
    • Storage Temperature :
      -55 to 125 Degree C

    Technical Documents

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