1416GN-600V Image

1416GN-600V

RF Transistor by Microsemi (170 more products)

Note : Your Quotation Request will be directed to Microsemi.

The 1416GN-600V from Microsemi is a RF Transistor with Frequency 1.4 to 1.6 GHz, Power 57.78 to 57.78 dBm, Power(W) 599.79 W, Duty_Cycle 0.1, Power Gain (Gp) 16.8 to 17.4 dB. More details for 1416GN-600V can be seen below.

Product Specifications

  • Part Number
    1416GN-600V
  • Manufacturer
    Microsemi
  • Description
    Class-AB GaN-on-SiC HEMT Transistor
  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Aerospace & Defence, Wireless Infrastructure
  • Application
    Broadband Amplifier, Data Link, Avionics
  • CW/Pulse
    Pulse
  • Frequency
    1.4 to 1.6 GHz
  • Power
    57.78 to 57.78 dBm
  • Power(W)
    599.79 W
  • Pulsed Power
    600 W
  • Pulsed Width
    300 us
  • Duty_Cycle
    0.1
  • Power Gain (Gp)
    16.8 to 17.4 dB
  • VSWR
    3.00:1
  • Class
    AB
  • Supply Voltage
    50 V
  • Drain Bias Current
    64 mA
  • Thermal Resistance
    0.28 C/W
  • Package Type
    Die
  • Package
    55-KR
  • RoHS
    Yes
  • Operating Temperature
    250 Degree C
  • Storage Temperature
    -55 to 125 Degree C
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