2729GN-500 Image

2729GN-500

RF Transistor by Microsemi (263 more products)

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The 2729GN-500 from Microsemi is a RF Transistor with Frequency 2.7 to 2.9 GHz, Gain 11.5 to 12.6 dB, Power Gain (Gp) 11.5 to 12.6 dB, Power 56.99 to 57.16 dBm, Breakdown Voltage - Drain-Source 250 V. More details for 2729GN-500 can be seen below.

Product Specifications

  • Part Number
    2729GN-500
  • Manufacturer
    Microsemi
  • Description
    2.7 to 2.9 GHz GaN Transistor
  • Transistor Type
  • Application
    S Band
  • Application Type
    Radar
  • Class
    AB
  • Grade
    Military, Commercial
  • Frequency
    2.7 to 2.9 GHz
  • Gain
    11.5 to 12.6 dB
  • Power Gain (Gp)
    11.5 to 12.6 dB
  • Power
    56.99 to 57.16 dBm
  • Breakdown Voltage - Drain-Source
    250 V
  • Drain Efficiency
    47 to 53 %
  • Drain Leakage Current (Id)
    10 mA
  • Gate Leakage Current (Ig)
    8 mA
  • Duty_Cycle
    0.1
  • Technology
    GaN, HEMT
  • VSWR
    3.00:1
  • Junction Temperature (Tj)
    250 Degree C
  • Power Dissipation (Pdiss)
    1000 W
  • Voltage - Drain-Source (Vdss)
    150 V
  • Voltage - Gate-Source (Vgs)
    -8 to 0 V
  • Thermal Resistance
    0.2 Degree C/W
  • Package
    Ceramic, Flanged
  • RoHS
    Yes
  • Storage Temperature
    -55 to 125 Degree C
  • Tags
    Microsemi IMS 2015
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