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The 2729GN-500 from Microsemi is a RF Transistor with Frequency 2.7 to 2.9 GHz, Gain 11.5 to 12.6 dB, Power Gain (Gp) 11.5 to 12.6 dB, Power 56.99 to 57.16 dBm, Breakdown Voltage - Drain-Source 250 V. More details for 2729GN-500 can be seen below.
1805 to 1880 MHz, 89 W Airfast RF Power LDMOS Transistor
4500 to 5900 MHz GaN HEMT for C-Band Radar Systems
GaN HEMT Transistor 1.2 to 1.4 GHz
You can now find similar products from multiple companies on everything RF.