2730GN – 100L Image

2730GN – 100L

RF Transistor by Microsemi (263 more products)

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The 2730GN – 100L from Microsemi is a RF Transistor with Frequency 2.7 to 3 GHz, Gain 11 to 12 dB, Power Gain (Gp) 11 to 12 dB, Power 50 to 50.79 dBm, Breakdown Voltage - Drain-Source 250 V. More details for 2730GN – 100L can be seen below.

Product Specifications

  • Part Number
    2730GN – 100L
  • Manufacturer
    Microsemi
  • Description
    2.7 to 3 GHz GaN Transistor
  • Transistor Type
  • Application
    S Band
  • Application Type
    Radar
  • Class
    AB
  • Grade
    Military, Commercial
  • Frequency
    2.7 to 3 GHz
  • Gain
    11 to 12 dB
  • Power Gain (Gp)
    11 to 12 dB
  • Power
    50 to 50.79 dBm
  • Breakdown Voltage - Drain-Source
    250 V
  • Drain Efficiency
    50 to 55 %
  • Drain Leakage Current (Id)
    2.5 mA
  • Gate Leakage Current (Ig)
    2 mA
  • Duty_Cycle
    0.3
  • Technology
    GaN, HEMT
  • VSWR
    3.00:1
  • Junction Temperature (Tj)
    250 Degree C
  • Power Dissipation (Pdiss)
    250 W
  • Voltage - Drain-Source (Vdss)
    150 V
  • Voltage - Gate-Source (Vgs)
    -8 to 0 V
  • Thermal Resistance
    0.8 Degree C/W
  • Package
    Ceramic, Flanged
  • RoHS
    Yes
  • Storage Temperature
    -55 to 125 Degree C
  • Tags
    Microsemi IMS 2015
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