2731GN-120V Image

2731GN-120V

RF Transistor by Microsemi (170 more products)

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The 2731GN-120V from Microsemi is a RF Transistor with Frequency 2.7 to 3.1 GHz, Power 50.79 to 51.61 dBm, Power(W) 144.88 W, Duty_Cycle 0.1, Power Gain (Gp) 15.7 to 16.5 dB. More details for 2731GN-120V can be seen below.

Product Specifications

  • Part Number
    2731GN-120V
  • Manufacturer
    Microsemi
  • Description
    Class-AB GaN-on-SiC HEMT Transistor
  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Radar
  • Application
    S Band, Pulsed
  • CW/Pulse
    Pulse
  • Frequency
    2.7 to 3.1 GHz
  • Power
    50.79 to 51.61 dBm
  • Power(W)
    144.88 W
  • Pulsed Power
    120 to 145 W
  • Pulsed Width
    200 us
  • Duty_Cycle
    0.1
  • Power Gain (Gp)
    15.7 to 16.5 dB
  • VSWR
    3.00:1
  • Class
    AB
  • Supply Voltage
    50 V
  • Drain Bias Current
    12 mA
  • Thermal Resistance
    1.13 C/W
  • Package Type
    Die
  • Package
    55-QP
  • Operating Temperature
    250 Degree C
  • Storage Temperature
    -55 to 125 Degree C
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