2731GN – 200M Image

2731GN – 200M

RF Transistor by Microsemi (263 more products)

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The 2731GN – 200M from Microsemi is a RF Transistor with Frequency 2.7 to 3.1 GHz, Gain 12.2 to 12.7 dB, Power Gain (Gp) 12.2 to 12.7 dB, Power 53.01 to 53.52 dBm, Breakdown Voltage - Drain-Source 250 V. More details for 2731GN – 200M can be seen below.

Product Specifications

  • Part Number
    2731GN – 200M
  • Manufacturer
    Microsemi
  • Description
    2.7 to 3.1 GHz GaN Transistor
  • Transistor Type
  • Application
    S Band
  • Application Type
    Radar
  • Class
    AB
  • Grade
    Military, Commercial
  • Frequency
    2.7 to 3.1 GHz
  • Gain
    12.2 to 12.7 dB
  • Power Gain (Gp)
    12.2 to 12.7 dB
  • Power
    53.01 to 53.52 dBm
  • Breakdown Voltage - Drain-Source
    250 V
  • Drain Efficiency
    42 to 50 %
  • Drain Leakage Current (Id)
    5 mA
  • Gate Leakage Current (Ig)
    4 mA
  • Duty_Cycle
    0.1
  • Technology
    GaN, HEMT
  • VSWR
    5.00:1
  • Junction Temperature (Tj)
    200 Degree C
  • Power Dissipation (Pdiss)
    400 W
  • Voltage - Drain-Source (Vdss)
    150 V
  • Voltage - Gate-Source (Vgs)
    -8 to 0 V
  • Thermal Resistance
    0.6 Degree C/W
  • Package
    Ceramic, Flanged
  • RoHS
    Yes
  • Storage Temperature
    -55 to 125 Degree C
  • Tags
    Microsemi IMS 2015
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