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The 2735GN-100 from Microsemi is a RF Transistor with Frequency 2.7 to 3.5 GHz, Gain 11 dB, Power Gain (Gp) 11 dB, Power 0 to 50 dBm, Drain Efficiency 40%. More details for 2735GN-100 can be seen below.
1805 to 1880 MHz, 89 W Airfast RF Power LDMOS Transistor
4500 to 5900 MHz GaN HEMT for C-Band Radar Systems
GaN HEMT Transistor 1.2 to 1.4 GHz
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