2735GN-100

RF Transistor by Microsemi (263 more products)

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The 2735GN-100 from Microsemi is a RF Transistor with Frequency 2.7 to 3.5 GHz, Gain 11 dB, Power Gain (Gp) 11 dB, Power 0 to 50 dBm, Drain Efficiency 40%. More details for 2735GN-100 can be seen below.

Product Specifications

  • Part Number
    2735GN-100
  • Manufacturer
    Microsemi
  • Description
    2.7 to 3.5 GHz GaN Transistor
  • Transistor Type
  • Grade
    Military, Commercial
  • Frequency
    2.7 to 3.5 GHz
  • Gain
    11 dB
  • Power Gain (Gp)
    11 dB
  • Power
    0 to 50 dBm
  • Drain Efficiency
    40%
  • Drain Leakage Current (Id)
    30 mA
  • Duty_Cycle
    0.1
  • Technology
    GaN, HEMT
  • VSWR
    5.00:1
  • Voltage - Drain-Source (Vdss)
    60 V
  • Thermal Resistance
    1.10 Degree C/W
  • Tags
    Microsemi IMS 2015
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