2735GN – 100M Image

2735GN – 100M

RF Transistor by Microsemi (263 more products)

Note : Your Quotation Request will be directed to Microsemi.

The 2735GN – 100M from Microsemi is an internally matched Class AB GaN transistor which operates from 2700 to 3500 MHz. It provides up to 100 W of power with a gain of 11 dB and an efficiency of 48%. It requires a supply voltage of 60 V and is ideal for general purpose driver amplifiers and for S-band radar applications. This GaN Transistor is available in a flanged 55-QP package and utilizes gold metallization and eutectic attach to provide highest reliability and superior ruggedness.

Product Specifications

  • Part Number
    2735GN – 100M
  • Manufacturer
    Microsemi
  • Description
    2700 - 3500 MHz, 100 W, 11 dB, GaN Transistors
  • Transistor Type
  • Application
    S Band
  • Application Type
    Radar
  • Class
    Class AB
  • Grade
    SATCOM
  • Frequency
    2700 to 3500 MHz
  • Gain
    11 dB
  • Power
    50 to 50.41 dBm
  • Supply Voltage
    60 V
  • Breakdown Voltage - Drain-Source
    250 V
  • Drain Efficiency
    40% to 48%
  • Drain Leakage Current (Id)
    2.5 mA
  • Base Current (Ib)
    250 mA
  • Gate Leakage Current (Ig)
    2 mA
  • Technology
    GaN, SiC
  • Input Return Loss
    7 dB
  • Power Dissipation (Pdiss)
    200 W
  • Voltage - Drain-Source (Vdss)
    150 V
  • Voltage - Gate-Source (Vgs)
    -8 to 0 V
  • Thermal Resistance
    1.1 °C/W
  • Package
    Flanged
  • Operating Temperature
    200°C
  • Storage Temperature
    -55 to 125°C
Need Help?

Need Help?

x
Let us know what you need, we can help find products that meet your requirement.