3135GN-170M

RF Transistor by Microsemi (263 more products)

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The 3135GN-170M from Microsemi is a RF Transistor with Frequency 3.1 to 3.5 GHz, Gain 11.50 dB, Power Gain (Gp) 11.50 dB, Power 0 to 52.3 dBm, Drain Efficiency 35%. More details for 3135GN-170M can be seen below.

Product Specifications

  • Part Number
    3135GN-170M
  • Manufacturer
    Microsemi
  • Description
    3.1 to 3.5 GHz GaN Transistor
  • Transistor Type
  • Grade
    Military, Commercial
  • Frequency
    3.1 to 3.5 GHz
  • Gain
    11.50 dB
  • Power Gain (Gp)
    11.50 dB
  • Power
    0 to 52.3 dBm
  • Drain Efficiency
    35%
  • Drain Leakage Current (Id)
    60 mA
  • Duty_Cycle
    0.1
  • Technology
    GaN, HEMT
  • VSWR
    3.00:1
  • Voltage - Drain-Source (Vdss)
    60 V
  • Thermal Resistance
    0.6 Degree C/W
  • Tags
    Microsemi IMS 2015
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