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MS1007

RF Transistor by Microsemi (170 more products)

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The MS1007 from Microsemi is a RF Transistor with Frequency DC to 30 MHz, Power 51.76 dBm, Power(W) 149.97 W, Power Gain (Gp) 14 dB, Supply Voltage 50 V. Tags: 2-Hole Flange. More details for MS1007 can be seen below.

Product Specifications

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Product Details

  • Part Number
    MS1007
  • Manufacturer
    Microsemi
  • Description
    RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

General Parameters

  • Transistor Type
    Bipolar
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure, Aerospace & Defence, Broadcast
  • Application
    HF
  • CW/Pulse
    CW
  • Frequency
    DC to 30 MHz
  • Power
    51.76 dBm
  • Power(W)
    149.97 W
  • Power Gain (Gp)
    14 dB
  • Collector Base Voltage
    110 V
  • Collector Emmiter Voltage
    55 to 110 V
  • Polarity
    NPN
  • Supply Voltage
    50 V
  • IMD
    -30 dBc
  • Output Capacitance
    220 pF
  • Package Type
    2-Hole Flange
  • Package
    M174
  • Storage Temperature
    -65 to 150 Degree C

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