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MS1051

RF Transistor by Microsemi (170 more products)

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The MS1051 from Microsemi is a Class C epitaxial silicon NPN planar transistor that operates from 1 MHz to 30 MHz. It has a gain of 12 dB, an IMD of -30 dBc and provides an output power of 100 W. This transistor utilizes state-of-the-art diffused emitter ballasting to achieve extreme ruggedness under severe operating conditions. It requires a supply of 12.5 V and is ideal for HF communications.

Product Specifications

  • Part Number
    MS1051
  • Manufacturer
    Microsemi
  • Description
    RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
  • Transistor Type
    Bipolar
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure, Aerospace & Defence, Broadcast
  • Application
    HF
  • CW/Pulse
    CW
  • Frequency
    DC to 30 MHz
  • Power
    50 dBm
  • Power(W)
    100 W
  • Power Gain (Gp)
    11 to 13 dB
  • Class
    C
  • Collector Base Voltage
    36 V
  • Collector Emmiter Voltage
    18 to 36 V
  • Polarity
    NPN
  • Supply Voltage
    12.5 V
  • IMD
    -30 dBc
  • Output Capacitance
    400 pF
  • Package Type
    2-Hole Flange
  • Package
    M174
  • Storage Temperature
    -65 to 150 Degree C
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