MS2200

RF Transistor by Microsemi (170 more products)

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The MS2200 from Microsemi is a RF Transistor with Frequency 400 to 500 MHz, Power 56.99 dBm, Power(W) 500.03 W, Duty_Cycle 0.1, Power Gain (Gp) 9.7 dB. Tags: Flanged. More details for MS2200 can be seen below.

Product Specifications

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Product Details

  • Part Number
    MS2200
  • Manufacturer
    Microsemi
  • Description
    RF AND MICROWAVE TRANSISTORS UHF PULSED APPLICATIONS

General Parameters

  • Transistor Type
    Bipolar
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure, Aerospace & Defence, Broadcast
  • Application
    UHF, Pulse
  • CW/Pulse
    CW
  • Frequency
    400 to 500 MHz
  • Power
    56.99 dBm
  • Power(W)
    500.03 W
  • Pulsed Width
    250 us
  • Duty_Cycle
    0.1
  • Power Gain (Gp)
    9.7 dB
  • Class
    C
  • Collector Base Voltage
    65 V
  • Collector Emmiter Voltage
    65 V
  • Polarity
    NPN
  • Supply Voltage
    40 V
  • Input Power
    54 W
  • Package Type
    Flanged
  • Package
    MS102
  • Storage Temperature
    -65 to 150 Degree C

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