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MGF4841CL

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The MGF4841CL from Mitsubishi Electric US, Inc. is a RF Transistor with Frequency DC to 24.3 GHz, Power 11.5 dBm, Power(W) 0.01 W, P1dB 5.5 dBm, Saturated Power 10 to 11.5 dBm. Tags: Flanged. More details for MGF4841CL can be seen below.

Product Specifications

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Product Details

  • Part Number
    MGF4841CL
  • Manufacturer
    Mitsubishi Electric US, Inc.
  • Description
    DC to 24.3 GHz, HEMT Transistor

General Parameters

  • Transistor Type
    HEMT
  • Technology
    InGaAs
  • Application Industry
    Wireless Infrastructure, Aerospace & Defence, Broadcast
  • Application
    K Band
  • CW/Pulse
    CW
  • Frequency
    DC to 24.3 GHz
  • Power
    11.5 dBm
  • Power(W)
    0.01 W
  • P1dB
    5.5 dBm
  • Saturated Power
    10 to 11.5 dBm
  • Power Gain (Gp)
    6 to 8.5 dB
  • Supply Voltage
    1.5 V
  • Breakdown Voltage
    -4 V (Gate Drain)
  • Package Type
    Flanged
  • RoHS
    Yes
  • Storage Temperature
    -55 to 125 Degree C

Technical Documents
View details on the manufacturer's website
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