MGF4941AL

RF Transistor by Mitsubishi Electric US, Inc. (41 more products)

Note : Your request will be directed to Mitsubishi Electric US, Inc..

The MGF4941AL from Mitsubishi Electric US, Inc. is a RF Transistor with Frequency DC to 12 GHz, Gain 12 to 13.5 dB, Noise Figure 0.35 to 0.50 dB, Supply Voltage 2 V, Storage Temperature -55 to 125 Degree C. Tags: Flange. More details for MGF4941AL can be seen below.

Product Specifications

    Product Details

    • Part Number :
      MGF4941AL
    • Manufacturer :
      Mitsubishi Electric US, Inc.
    • Description :
      DC to 12 GHz, HEMT Transistor

    General Parameters

    • Transistor Type :
      HEMT
    • Technology :
      InGaAs
    • Application Industry :
      Wireless Infrastructure, Aerospace & Defence, Broadcast
    • Application :
      L Band, Ku-Band
    • CW/Pulse :
      CW
    • Frequency :
      DC to 12 GHz
    • Gain :
      12 to 13.5 dB
    • Noise Figure :
      0.35 to 0.50 dB
    • Supply Voltage :
      2 V
    • Breakdown Voltage :
      -3.5 V (Gate Drain)
    • Drain Bias Current :
      10 mA
    • Quiescent Drain Current :
      10000 mA
    • Package Type :
      Flange
    • RoHS :
      Yes
    • Storage Temperature :
      -55 to 125 Degree C

    Technical Documents

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Application Note

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