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MGFK45G3745

RF Transistor by Mitsubishi Electric US, Inc.

Note : Your request will be directed to Mitsubishi Electric US, Inc..

The MGFK45G3745 from Mitsubishi Electric is an internally matched, GaN HEMT that operates from 13.75 to 14.50 GHz. It delivers an output power of 30 W with a gain of 9.5 dB and has a power added efficiency (PAE) of 31%. It requires a supply voltage of 24 V.  The transistor has an N-channel Schottky gate and is available in a GF-68 package that measures 21.0 x 12.9 mm and is designed for use as an amplifier in Ku-band satellite communication (SATCOM) earth station applications.

Product Specifications

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Product Details

  • Part Number
    MGFK45G3745
  • Manufacturer
    Mitsubishi Electric US, Inc.
  • Description
    30 W GaN HEMT from 13.75 to 14.5 GHz for SATCOM Applications

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN
  • Application Industry
    SATCOM
  • Frequency
    13.75 to 14.50 GHz
  • Power
    45.3 dBm
  • Power(W)
    33.88 W
  • Gain
    8.5 to 9.5 dB
  • Class
    Class AB
  • Supply Voltage
    24 V
  • Input Power
    41 dBm
  • Thermal Resistance
    1.6 to 2 Degree C/W
  • Package Type
    Flanged
  • RoHS
    Yes
  • Grade
    Commercial, Space Qualified
  • Storage Temperature
    -55 to 125 Degree C
  • Note
    Power added efficiency:- 31 %,

Technical Documents

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