Note : Your request will be directed to Mitsubishi Electric US, Inc..
The MGFK45G3745 from Mitsubishi Electric is an internally matched, GaN HEMT that operates from 13.75 to 14.50 GHz. It delivers an output power of 30 W with a gain of 9.5 dB and has a power added efficiency (PAE) of 31%. It requires a supply voltage of 24 V. The transistor has an N-channel Schottky gate and is available in a GF-68 package that measures 21.0 x 12.9 mm and is designed for use as an amplifier in Ku-band satellite communication (SATCOM) earth station applications.
SiGe:C NPN Heterojunction Bipolar Transistor
1250 W GaN Power Transistor from 430 to 450 MHz
8 W GaN Power HEMT Die from DC to 26 GHz
460 W GaN Power Amplifier from 1805 to 1880 MHz
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