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The MGFK45G3745 from Mitsubishi Electric is an internally matched, GaN HEMT that operates from 13.75 to 14.50 GHz. It delivers an output power of 30 W with a gain of 9.5 dB and has a power added efficiency (PAE) of 31%. It requires a supply voltage of 24 V. The transistor has an N-channel Schottky gate and is available in a GF-68 package that measures 21.0 x 12.9 mm and is designed for use as an amplifier in Ku-band satellite communication (SATCOM) earth station applications.
300 W CW/Pulsed GaN HEMT from 1.2 to 1.4 GHz for Radar Applications
200 W Asymmetrical Doherty GaN HEMT from 2520 to 2630 MHz
330 W GaN on SiC HEMT from 2.3 to 2.5 GHz
SP4T Solid-State Reflective Switch from 20 to 4300 MHz
RF Shield Test Box on Wheels from 20 MHz to 12 GHz
1 mm (Female) to WR-10 Right-Angle Adapter from 75 to 110 GHz
10 dB Directional Coupler from 0.6 to 20 GHz
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