MGFK48G3745A

Note : Your request will be directed to Mitsubishi Electric US, Inc..

MGFK48G3745A Image

The MGFK48G3745A from Mitsubishi Electric is a Ku-band GaN High Electron Mobility Transistor (HEMT) designed for satellite earth station applications. It operates from 13.75 to 14.5 GHz and provides a saturated output power of 70 W with a gain of 11 dB. This transistor uses a matching circuit to deliver an industry-leading wide offset frequency, which is 80 times higher than that of current models, and low third-order intermodulation distortion (IMD3) with a wide offset frequency of up to 400MHz, for large-capacity, high-speed satellite communications, including multiple carriers.

Product Specifications

View similar products

Product Details

  • Part Number
    MGFK48G3745A
  • Manufacturer
    Mitsubishi Electric US, Inc.
  • Description
    70W GaN HEMT for Satellite Earth Stations

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    SATCOM
  • Frequency
    13.75 to 14.5 GHz
  • Power
    48.3 dBm
  • Power(W)
    70 W
  • Gain
    11 dB
  • Package Type
    Flanged
  • Note
    Offset Frequency : 400 MHz

Technical Documents