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MGFK48G3745A

RF Transistor by Mitsubishi Electric US, Inc. (43 more products)

Note : Your request will be directed to Mitsubishi Electric US, Inc..

The MGFK48G3745A from Mitsubishi Electric is a Ku-band GaN High Electron Mobility Transistor (HEMT) designed for satellite earth station applications. It operates from 13.75 to 14.5 GHz and provides a saturated output power of 70 W with a gain of 11 dB. This transistor uses a matching circuit to deliver an industry-leading wide offset frequency, which is 80 times higher than that of current models, and low third-order intermodulation distortion (IMD3) with a wide offset frequency of up to 400MHz, for large-capacity, high-speed satellite communications, including multiple carriers.

Product Specifications

    Product Details

    • Part Number :
      MGFK48G3745A
    • Manufacturer :
      Mitsubishi Electric US, Inc.
    • Description :
      70W GaN HEMT for Satellite Earth Stations

    General Parameters

    • Transistor Type :
      HEMT
    • Technology :
      GaN on SiC
    • Application Industry :
      SATCOM
    • Frequency :
      13.75 to 14.5 GHz
    • Power :
      48.3 dBm
    • Power(W) :
      70 W
    • Gain :
      11 dB
    • Package Type :
      Flanged
    • Note :
      Offset Frequency : 400 MHz

    Technical Documents

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