MGFK49G3745

RF Transistor by Mitsubishi Electric US, Inc.

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The MGFK49G3745 from Mitsubishi Electric US, Inc. is a RF Transistor with Frequency 13.75 to 14.5 GHz, Power 49.03 dBm, Power(W) 79.98 W, Power Gain (Gp) 6.5 to 7.5 dB, Supply Voltage 24 V. Tags: Flange. More details for MGFK49G3745 can be seen below.

Product Specifications

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Product Details

  • Part Number
    MGFK49G3745
  • Manufacturer
    Mitsubishi Electric US, Inc.
  • Description
    13.75 to 14.5 GHz, HEMT Transistor

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    SATCOM
  • Application
    Ku-Band
  • CW/Pulse
    CW
  • Frequency
    13.75 to 14.5 GHz
  • Power
    49.03 dBm
  • Power(W)
    79.98 W
  • Power Gain (Gp)
    6.5 to 7.5 dB
  • Polarity
    N-channel
  • Supply Voltage
    24 V
  • Input Power
    31.62 W
  • Drain Bias Current
    2100 mA
  • Quiescent Drain Current
    2100 mA
  • Package Type
    Flange
  • RoHS
    Yes
  • Storage Temperature
    -65 to 175 Degree C

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