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MGFK50G3745

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The MGFK50G3745 from Mitsubishi Electric US, Inc. is a RF Transistor with Frequency 13.75 to 14.5 GHz, Power 49 to 50.2 dBm, Power(W) 79.43 to 104.7 W, Power Gain (Gp) 8 to 9.2 dB, Power Added Effeciency 30%. Tags: Flanged. More details for MGFK50G3745 can be seen below.

Product Specifications

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Product Details

  • Part Number
    MGFK50G3745
  • Manufacturer
    Mitsubishi Electric US, Inc.
  • Description
    100 W, GaN HEMT from 13.75 to 14.5 for SATCOM Earth Station

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    SATCOM
  • Application
    Ku-Band, Industrial, General Purpose
  • CW/Pulse
    CW
  • Frequency
    13.75 to 14.5 GHz
  • Power
    49 to 50.2 dBm
  • Power(W)
    79.43 to 104.7 W
  • Power Gain (Gp)
    8 to 9.2 dB
  • Power Added Effeciency
    30%
  • Class
    Class AB
  • Supply Voltage
    27 V
  • Input Power
    47 dBm
  • Voltage - Gate-Source (Vgs)
    -5 to -1 V
  • Current
    48 mA
  • Drain Current
    2.4 A
  • Power Dissipation (Pdiss)
    375 W
  • Thermal Resistance
    0.4 to 0.6 Degree C/W
  • Package Type
    Flanged
  • Package
    GF-69
  • RoHS
    Yes
  • Grade
    Commercial
  • Storage Temperature
    -55 to 125 Degree C

Technical Documents
View details on the manufacturer's website
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