Fill one form and get quotes for cable assemblies from multiple manufacturers
Note : Your request will be directed to Mitsubishi Electric US, Inc..
The MGFK50G3745 from Mitsubishi Electric is a GaN High-electron-mobility transistor (HEMT) that operates from 13.75 to 14.5 GHz. It delivers an output power of 100 W (50 dBm) with a power gain of 10 dB and has a power-added efficiency (PAE) of 30%. This transistor is based on GaN HEMT technology with an integrated N-channel Schottky gate. It required a DC supply of 24 V and draws 2.4 A of current. The transistor is available in an internally-matched surface-mount package that measures 24.0 x 17.4 x 7.2 mm and is suitable for use in Class AB linear amplifiers and amplifiers in Ku-band for SATCOM earth station applications.
300 W CW/Pulsed GaN HEMT from 1.2 to 1.4 GHz for Radar Applications
200 W Asymmetrical Doherty GaN HEMT from 2520 to 2630 MHz
330 W GaN on SiC HEMT from 2.3 to 2.5 GHz
1 mm (Female) to WR-10 Right-Angle Adapter from 75 to 110 GHz
4-Way Power Divider/Combiner from 2 to 4.2 GHz
3000 W Solid-State Amplifier from 80 to 1000 MHz
Surface Mount Conical RF Chokes from 1.3 to 3.5 uH
Create an account on everything RF to get a range of benefits.
By creating an account with us you agree to our Terms of Service and acknowledge receipt of our Privacy Policy.
Login to everything RF to download datasheets, white papers and more content.