MGFK50G3745

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The MGFK50G3745 from Mitsubishi Electric is a GaN High-electron-mobility transistor (HEMT) that operates from 13.75 to 14.5 GHz. It delivers an output power of 100 W (50 dBm) with a power gain of 10 dB and has a power-added efficiency (PAE) of 30%. This transistor is based on GaN HEMT technology with an integrated N-channel Schottky gate. It required a DC supply of 24 V and draws 2.4 A of current. The transistor is available in an internally-matched surface-mount package that measures 24.0 x 17.4 x 7.2 mm and is suitable for use in Class AB linear amplifiers and amplifiers in Ku-band for SATCOM earth station applications.

Product Specifications

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Product Details

  • Part Number
    MGFK50G3745
  • Manufacturer
    Mitsubishi Electric US, Inc.
  • Description
    100 W GaN HEMT from 13.75 to 14.5 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN
  • Application Industry
    SATCOM
  • Application
    Ku-Band, Industrial, General Purpose
  • CW/Pulse
    CW
  • Frequency
    13.75 to 14.5 GHz
  • Power
    49 to 50 dBm
  • Power(W)
    79.43 to 100 W
  • Power Gain (Gp)
    8 to 9.2 dB
  • Power Added Effeciency
    30%
  • Class
    Class AB
  • Supply Voltage
    27 V
  • Input Power
    47 dBm
  • Voltage - Gate-Source (Vgs)
    -5 to -1 V
  • Current
    48 mA
  • Drain Current
    2.4 A
  • Power Dissipation (Pdiss)
    375 W
  • Thermal Resistance
    0.4 to 0.6 Degree C/W
  • Package Type
    Flanged
  • Package
    GF-69
  • RoHS
    Yes
  • Grade
    Commercial
  • Storage Temperature
    -55 to 125 Degree C

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