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MGFK50G3745A

RF Transistor by Mitsubishi Electric US, Inc. (43 more products)

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The MGFK50G3745A from Mitsubishi Electric is a Ku-band GaN High Electron Mobility Transistor (HEMT) designed for satellite earth station applications. It operates from 13.75 to 14.5 GHz and provides a saturated output power of 100 W with a gain of 10 dB. It combines unmatched power output with low third-order intermodulation distortion (IMD3) and an offset frequency of up to 200MHz. The transistor uses optimized transistor matching circuits to deliver 100W peak output power for downsizing SATCOM earth stations.

Product Specifications

    Product Details

    • Part Number :
      MGFK50G3745A
    • Manufacturer :
      Mitsubishi Electric US, Inc.
    • Description :
      100W GaN HEMT for Satellite Earth Stations

    General Parameters

    • Transistor Type :
      HEMT
    • Technology :
      GaN on SiC
    • Application Industry :
      SATCOM
    • Frequency :
      13.75 to 14.5 GHz
    • Power :
      50 dBm
    • Power(W) :
      100 W
    • Gain :
      10 dB
    • Package Type :
      Flanged
    • Note :
      Offset Frequency : 200 MHz

    Technical Documents

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