MGFS37G38L2-01

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The MGFS37G38L2-01 from Mitsubishi Electric is a GaN HEMT that operates from 2.5 to 3.8 GHz. It provides a saturated output power of up to 37 dBm with a gain of 18 dB and has a typical drain efficiency of up to 60%. The device requires a voltage of 55 V and can handle up to 27 dBm of input power. The transistor is available in a GF-67 package that measures 7.2 x 6.6 mm and is ideal for S-band transmitter applications.

Product Specifications

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Product Details

  • Part Number
    MGFS37G38L2-01
  • Manufacturer
    Mitsubishi Electric US, Inc.
  • Description
    5 W S-Band GaN HEMT from 2.5 to 3.8 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application
    S-Band Base Transmitter Station Applications
  • CW/Pulse
    CW, Pulse
  • Frequency
    2.5 to 3.8 GHz
  • Power
    35.5 to 37 dBm (Psat)
  • Power(W)
    3.54 to 5.01 W (Psat)
  • Duty_Cycle
    10 %
  • Gain
    17 to 18 dB
  • Power Added Effeciency
    60 %
  • Supply Voltage
    50 V
  • Current
    24 mA
  • Drain Efficiency
    20 to 25 %
  • Package Type
    Surface Mount
  • RoHS
    Yes
  • Storage Temperature
    -55 to 150 Degree C

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