Note : Your request will be directed to Mitsubishi Electric US, Inc..
The MGFS37G38L2-01 from Mitsubishi Electric is a GaN HEMT that operates from 2.5 to 3.8 GHz. It provides a saturated output power of up to 37 dBm with a gain of 18 dB and has a typical drain efficiency of up to 60%. The device requires a voltage of 55 V and can handle up to 27 dBm of input power. The transistor is available in a GF-67 package that measures 7.2 x 6.6 mm and is ideal for S-band transmitter applications.
6 W RF Power GaN HEMT in a Plastic Package
490 W GaN HEMT Transistor from 2.11 to 2.17 GHz
30 W GaN HEMT from 13.75 to 14.5 GHz for SATCOM Applications
SiGe:C NPN Heterojunction Bipolar Transistor
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