RD04HMS2

Note : Your request will be directed to Mitsubishi Electric US, Inc..

The RD04HMS2 from Mitsubishi Electric US, Inc. is a RF Transistor with Frequency 890 to 950 MHz, Power 36.99 dBm, Power(W) 0.0031 W, Gain 14 dB, Supply Voltage 12.5 V. Tags: Flange. More details for RD04HMS2 can be seen below.

Product Specifications

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Product Details

  • Part Number
    RD04HMS2
  • Manufacturer
    Mitsubishi Electric US, Inc.
  • Description
    890 to 950 MHz, MOSFET Transistor

General Parameters

  • Transistor Type
    MOSFET
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure
  • Application
    Mobile, Radio, HF/VHF/UHF
  • CW/Pulse
    CW
  • Frequency
    890 to 950 MHz
  • Power
    36.99 dBm
  • Power(W)
    0.0031 W
  • Gain
    14 dB
  • Supply Voltage
    12.5 V
  • Threshold Voltage
    1.6 to 2.6 V
  • Input Power
    0.2 W
  • Drain Efficiency
    0.73
  • Drain Bias Current
    0.005 mA
  • Quiescent Drain Current
    100 mA
  • Package Type
    Flange
  • RoHS
    Yes
  • Storage Temperature
    -40 to 125 Degree C

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