RD07MUS2B

RF Transistor by Mitsubishi Electric US, Inc. (41 more products)

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The RD07MUS2B from Mitsubishi is a RF Transistor that operates from 175 MHz to 870 MHz. It has been specifically designed for VHF/UHF/870 MHz RF power amplifiers applications. The transistor can provide up to 7 W of power and a gain of 13.8 dB with 65% efficiency. It requires a supply of 1.5 V to operate and available in a surface mount package.

Product Specifications

    Product Details

    • Part Number :
      RD07MUS2B
    • Manufacturer :
      Mitsubishi Electric US, Inc.
    • Description :
      175 to 870 MHz, MOSFET Transistor

    General Parameters

    • Transistor Type :
      MOSFET
    • Technology :
      Si
    • Application Industry :
      Wireless Infrastructure
    • Application :
      Mobile, Radio, HF/VHF/UHF
    • CW/Pulse :
      CW
    • Frequency :
      175 to 870 MHz
    • Power :
      38.45 to 39.03 dBm
    • Power(W) :
      8 W
    • Gain :
      11.5 to 13.8 dB
    • Supply Voltage :
      7.2 V
    • Threshold Voltage :
      0.5 to 1.5 V
    • Input Power :
      0.3 to 0.5 W
    • Drain Bias Current :
      0.01 mA
    • Quiescent Drain Current :
      250 mA
    • Package Type :
      Flange
    • RoHS :
      Yes
    • Storage Temperature :
      -40 to 125 Degree C

    Technical Documents

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