RD07MUS2B Image


RF Transistor by Mitsubishi Electric US, Inc. (3 more products)

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The RD07MUS2B from Mitsubishi is a RF Transistor that operates from 175 MHz to 870 MHz. It has been specifically designed for VHF/UHF/870 MHz RF power amplifiers applications. The transistor can provide up to 7 W of power and a gain of 13.8 dB with 65% efficiency. It requires a supply of 1.5 V to operate and available in a surface mount package.

Product Specifications

  • Part Number
  • Manufacturer
    Mitsubishi Electric US, Inc.
  • Description
    175 to 870 MHz RF MOSFET Transistor meets ROHS2 Standards
  • Transistor Type
  • Application
    HF/VHF/UHF, Radio
  • Application Type
  • Frequency
    175 to 870 MHz
  • Gain
    11.5 to 13.8 dB
  • Power
    38.45 to 39.03 dBm
  • Drain Efficiency
  • Drain Current
    10 uA
  • Voltage - Gate-Source (Vgs)
    0.5 to 1.5 V
  • Package
    Surface Mount
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