Note : Your request will be directed to Mitsubishi Electric US, Inc..
The RD07MUS2B from Mitsubishi is a RF Transistor that operates from 175 MHz to 870 MHz. It has been specifically designed for VHF/UHF/870 MHz RF power amplifiers applications. The transistor can provide up to 7 W of power and a gain of 13.8 dB with 65% efficiency. It requires a supply of 1.5 V to operate and available in a surface mount package.
300 W RF Power GaN Transistor for Cooking Applications
5 W LDMOS Integrated Doherty MMIC from 859 to 960 MHz
130 W GaN HEMT from DC to 3 GHz
20 W GaN on SiC HEMT from DC to 5 GHz
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