RD07MUS2B

Note : Your request will be directed to Mitsubishi Electric US, Inc..

The RD07MUS2B from Mitsubishi is a RF Transistor that operates from 175 MHz to 870 MHz. It has been specifically designed for VHF/UHF/870 MHz RF power amplifiers applications. The transistor can provide up to 7 W of power and a gain of 13.8 dB with 65% efficiency. It requires a supply of 1.5 V to operate and available in a surface mount package.

Product Specifications

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Product Details

  • Part Number
    RD07MUS2B
  • Manufacturer
    Mitsubishi Electric US, Inc.
  • Description
    175 to 870 MHz, MOSFET Transistor

General Parameters

  • Transistor Type
    MOSFET
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure
  • Application
    Mobile, Radio, HF/VHF/UHF
  • CW/Pulse
    CW
  • Frequency
    175 to 870 MHz
  • Power
    38.45 to 39.03 dBm
  • Power(W)
    8 W
  • Gain
    11.5 to 13.8 dB
  • Supply Voltage
    7.2 V
  • Threshold Voltage
    0.5 to 1.5 V
  • Input Power
    0.3 to 0.5 W
  • Drain Bias Current
    0.01 mA
  • Quiescent Drain Current
    250 mA
  • Package Type
    Flange
  • RoHS
    Yes
  • Storage Temperature
    -40 to 125 Degree C

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