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The RD07MUS2B from Mitsubishi is a RF Transistor that operates from 175 MHz to 870 MHz. It has been specifically designed for VHF/UHF/870 MHz RF power amplifiers applications. The transistor can provide up to 7 W of power and a gain of 13.8 dB with 65% efficiency. It requires a supply of 1.5 V to operate and available in a surface mount package.
2.7 to 3.1 GHz S Band GaN on SiC HEMT Transistor for Avionics
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