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The RD100HHF1C from Mitsubishi Electric US, Inc. is a RF Transistor with Frequency DC to 30 MHz, Power 50 to 50.41 dBm, Power(W) 109.9 W, Gain 11.5 dB, Supply Voltage 12.5 V. Tags: Flanged. More details for RD100HHF1C can be seen below.
410 W, GaN on SiC HEMT from 3.7 to 4.1 GHz
450 W GaN-on-SiC HEMT from 758 to 960 MHz
700 W GaN HEMT from 0.9 to 1.4 GHz for Avionics Application
25 W LDMOS FET from 500 to 1400 MHz
50 W GaN-on-SiC HEMT from 2515 to 2675 MHz
25 W Surface-Mount LDMOS FET from 500 to 1400 MHz
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