RD12MVP1

Note : Your request will be directed to Mitsubishi Electric US, Inc..

The RD12MVP1 from Mitsubishi Electric US, Inc. is a RF Transistor with Frequency DC to 175 MHz, Power 40 dBm, Power(W) 10 W, Supply Voltage 7.2 V, Input Power 0.5 W. Tags: Flanged. More details for RD12MVP1 can be seen below.

Product Specifications

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Product Details

  • Part Number
    RD12MVP1
  • Manufacturer
    Mitsubishi Electric US, Inc.
  • Description
    DC to 175 MHz, MOSFET Transistor

General Parameters

  • Transistor Type
    MOSFET
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure, Aerospace & Defence, Broadcast
  • CW/Pulse
    CW
  • Frequency
    DC to 175 MHz
  • Power
    40 dBm
  • Power(W)
    10 W
  • Supply Voltage
    7.2 V
  • Input Power
    0.5 W
  • Drain Efficiency
    0.55
  • Package Type
    Flanged
  • RoHS
    Yes
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