RD12MVS1

Note : Your request will be directed to Mitsubishi Electric US, Inc..

The RD12MVS1 from Mitsubishi Electric US, Inc. is a RF Transistor with Frequency DC to 175 MHz, Power 40.61 dBm, Power(W) 11.51 W, Supply Voltage 7.2 V, Input Power 1 W. Tags: Flanged. More details for RD12MVS1 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    RD12MVS1
  • Manufacturer
    Mitsubishi Electric US, Inc.
  • Description
    DC to 175 MHz, MOSFET Transistor

General Parameters

  • Transistor Type
    MOSFET
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure, Aerospace & Defence, Broadcast
  • Application
    HF/VHF/UHF
  • CW/Pulse
    CW
  • Frequency
    DC to 175 MHz
  • Power
    40.61 dBm
  • Power(W)
    11.51 W
  • Supply Voltage
    7.2 V
  • Input Power
    1 W
  • Drain Efficiency
    0.55
  • Package Type
    Flanged
  • RoHS
    Yes
Need Help Finding a Product?

Need Help?

Let us know what you need, we can help find products that meet your requirement.